High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts
Specifications
Type:
MOSFET
D/C:
2021
Package Type:
QFN
Supplier Type:
Original Manufacturer, ODM, Agency, Retailer, Other
Media Available:
Datasheet, Photo, EDA/CAD Models, Other
Brand:
Mosfet
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
-55 ℃~150 ℃
Mounting Type:
Surface Mount
Package / Case:
QFN, QFN
Drain To Source Voltage (Vdss):
30 V
Number Of Elements:
1
Number Of Pins:
8
Max Operating Temperature:
150 °C
Element Configuration:
Single
Min Operating Temperature:
-55 °C
Input Capacitance:
1.715 NF
Rds On Max:
5 MΩ
Number Of Channels:
1
RoHS:
Compliant
Highlight:
Mos Transistor IC Chip
,Transistor IC Chip FDPC5018SG
,RoHS High Power Mosfet Transistors
Introduction
FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor
Product overview
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Stock:
MOQ:
discussible