MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G
Category:
Transistor IC Chip
Price:
discussible
Payment Method:
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Drain-source Resistance:
0.1 Ω
Polarity:
P
Threshold Voltage:
0.4 V
Package:
SOT-23-3
Minimum Package:
3000
RoHS Standard:
RoHS Compliant
Lead Standard:
Lead Free
Highlight:
MOSFET NPN Transistor IC Chip
,Transistor IC Chip SOT-23
,LP2301BLT1G
Introduction
Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G
Products Description:
1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers
2.the material of product compliance withRoHS requirements and Halogen Free
3.S- prefix for automotive and other applications requiringunique site and control change requirements; AEC-Q101qualified and PPAP capable
4.RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ
5.RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ
6.Power management in note book Portable equipment Battery powered system Load switch DSC
MAXIMUM RATINGS(Ta = 25ºC)
| Parameter | Symbol | Limits | Unit |
| Drain–Source Voltage | VDSS | -20 | V |
| Gate–to–Source Voltage – Continuous | VGS | ±8 | V |
| Drain Current(Note 1) – Continuous TA = 25°C – Pulsed |
ID IDM |
-2 -10 |
A |
THERMAL CHARACTERISTICS
| Parameter | Symbol | Limits | Unit |
| Maximum Power Dissipation | PD | 0.7 | W |
| Thermal Resistance, junction–to–Ambient(Note 1) |
RΘJA | 175 | C/W |
| Junction and Storage temperature | TJ, Tstg | −55∼+150 | C |
Technological Parameters:
| Drain-source resistance | 0.1 Ω |
| Polarity | P |
| Threshold voltage | 0.4 V |
| Drain-source voltage (Vds) | 20 V |
| Continuous drain current (Ids) | 2.8A |
| Package | SOT-23-3 |
| Minimum package | 3000 |
| RoHS Standard | RoHS Compliant |
| lead standard | Lead Free |
| pin number | 6 |
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Stock:
MOQ:
discussible